DEFECT PRODUCTION DURING ION-IMPLANTATION OF VARIOUS AIIIBV SEMICONDUCTORS

被引：49
|
作者：
WESCH, W [1 ]
WENDLER, E [1 ]
GOTZ, G [1 ]
KEKELIDSE, NP [1 ]
机构：
[1] TBILISI STATE UNIV,TBILISI 380028,GEORGIA,USSR
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 02期
关键词：
D O I：
10.1063/1.343134
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：519 / 526
页数：8
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