DEFECT PRODUCTION DURING ION-IMPLANTATION OF VARIOUS AIIIBV SEMICONDUCTORS

被引：49

作者：

WESCH, W ^{[1
]}

WENDLER, E ^{[1
]}

GOTZ, G ^{[1
]}

KEKELIDSE, NP ^{[1
]}

机构：

[1] TBILISI STATE UNIV,TBILISI 380028,GEORGIA,USSR

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 02期

关键词：

D O I：

10.1063/1.343134

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：519 / 526

页数：8

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