EFFECTS OF SUBSTRATE MISORIENTATION ON THE STRUCTURAL-PROPERTIES OF CDTE(111) GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS(100)

被引:38
|
作者
RENO, JL [1 ]
GOURLEY, PL [1 ]
MONFROY, G [1 ]
FAURIE, JP [1 ]
机构
[1] UNIV ILLINOIS,DEPT PHYS,CHICAGO,IL 60680
关键词
D O I
10.1063/1.99777
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1747 / 1749
页数:3
相关论文
共 50 条
  • [31] STRUCTURAL-PROPERTIES OF FESI2/SI(111) HETEROSTRUCTURES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
    GERTHSEN, D
    SCHAFER, HC
    ROSEN, B
    RIZZI, A
    MORITZ, H
    LUTH, H
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1993, 1993, (134): : 185 - 190
  • [33] SUBSTRATE MISORIENTATION EFFECTS IN ALGAINP LASERS AND CRYSTALS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
    KIKUCHI, A
    KISHINO, K
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 9 - 13
  • [34] High quality CdTe/Cd1-xMgxTe quantum wells grown on GaAs(100) and (111) substrates by molecular-beam epitaxy
    Xin, SH
    Hu, BH
    Short, SW
    Bindley, U
    Yin, A
    Dobrowolska, M
    Furdyna, JK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03): : 2374 - 2377
  • [35] CHARACTERISTICS OF HEAVILY SI-DOPED GAAS GROWN ON (111)A ORIENTED SUBSTRATE BY MOLECULAR-BEAM EPITAXY AS COMPARED WITH (100) GROWTH
    OKANO, Y
    SETO, H
    KATAHAMA, H
    NISHINE, S
    FUJIMOTO, I
    SUZUKI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (02): : L151 - L154
  • [36] SURFACE-STRUCTURES AND PROPERTIES OF ZNSE GROWN ON (100) GAAS BY MOLECULAR-BEAM EPITAXY
    PARK, RM
    SALANSKY, NM
    APPLIED PHYSICS LETTERS, 1984, 44 (02) : 249 - 251
  • [37] EFFECTS OF SUBSTRATE-TEMPERATURE ON GAAS TUNNELING DIODES GROWN BY MOLECULAR-BEAM EPITAXY
    KATSUMOTO, S
    AMANO, C
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (04) : 1238 - 1240
  • [38] EFFECTS OF SUBSTRATE PREPARATION CONDITIONS ON GAAS OVAL DEFECTS GROWN BY MOLECULAR-BEAM EPITAXY
    FUJIWARA, K
    NISHIKAWA, Y
    TOKUDA, Y
    NAKAYAMA, T
    APPLIED PHYSICS LETTERS, 1986, 48 (11) : 701 - 703
  • [39] GROWTH OF (100) CDTE-FILMS OF HIGH STRUCTURAL PERFECTION ON (100) GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    BICKNELL, RN
    YANKA, RW
    GILES, NC
    SCHETZINA, JF
    MAGEE, TJ
    LEUNG, C
    KAWAYOSHI, H
    APPLIED PHYSICS LETTERS, 1984, 44 (03) : 313 - 315
  • [40] Electron diffraction on GaAs nanowhiskers grown on Si(100) and Si(111) substrates by molecular-beam epitaxy
    Soshnikov, I. P.
    Cirlin, G. E.
    Tonkikh, A. A.
    Nevedomskii, V. N.
    Samsonenko, Yu. B.
    Ustinov, V. M.
    PHYSICS OF THE SOLID STATE, 2007, 49 (08) : 1440 - 1445