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- [1] CLASSIFICATION AND ORIGINS OF GAAS OVAL DEFECTS GROWN BY MOLECULAR-BEAM EPITAXYJOURNAL OF CRYSTAL GROWTH, 1987, 80 (01) : 104 - 112FUJIWARA, KKANAMOTO, KOHTA, YNTOKUDA, YNAKAYAMA, T
- [2] PARTICULATES - AN ORIGIN OF GAAS OVAL DEFECTS GROWN BY MOLECULAR-BEAM EPITAXYAPPLIED PHYSICS LETTERS, 1985, 47 (04) : 391 - 393WENG, SLWEBB, CCHAI, YGBANDY, SG
- [3] SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXYAPPLIED PHYSICS LETTERS, 1981, 38 (10) : 796 - 798CHAI, YGCHOW, R
- [4] ORIGIN OF OVAL DEFECTS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXYJOURNAL OF CRYSTAL GROWTH, 1985, 73 (01) : 117 - 122AKIMOTO, KDOHSEN, MARAI, MWATANABE, N
- [5] THERMODYNAMIC STUDY ON THE ORIGIN OF OVAL DEFECTS IN GAAS GROWN BY MOLECULAR-BEAM EPITAXYJOURNAL OF APPLIED PHYSICS, 1989, 65 (11) : 4260 - 4267SHINOHARA, MITO, T
- [6] THE ORIGINS AND ELIMINATION OF OVAL DEFECTS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXYJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03): : 854 - 857TAKAHASHI, KKAWADA, HUEDA, SFURUSE, MSHIRAYONE, S
- [7] PARTICULATES - A DIRECT ORIGIN OF OVAL DEFECTS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXYJOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (05) : 267 - 271WENG, SLWEBB, CCHAI, YGBANDY, SG
- [8] MORPHOLOGICAL-STUDIES OF OVAL DEFECTS IN GAAS EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXYAPPLIED PHYSICS LETTERS, 1986, 48 (01) : 47 - 49MATTESON, SSHIH, HD
- [9] Microphotoluminescence of oval defects in a GaAs layer grown by molecular beam epitaxyAPPLIED PHYSICS LETTERS, 1998, 73 (14) : 2012 - 2014Kasai, JKawata, M
- [10] EFFECTS OF SUBSTRATE-TEMPERATURE ON GAAS TUNNELING DIODES GROWN BY MOLECULAR-BEAM EPITAXYJOURNAL OF APPLIED PHYSICS, 1988, 63 (04) : 1238 - 1240KATSUMOTO, SAMANO, C