EFFECTS OF SUBSTRATE PREPARATION CONDITIONS ON GAAS OVAL DEFECTS GROWN BY MOLECULAR-BEAM EPITAXY

被引：16
|
作者：
FUJIWARA, K
NISHIKAWA, Y
TOKUDA, Y
NAKAYAMA, T
机构：
来源：
APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 11期
关键词：
D O I：
10.1063/1.96748
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：701 / 703
页数：3
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