MOLTEN DIFFUSED SILICON TRANSISTORS

被引：3

|

作者：

TAUCHI, S

机构：

来源：

SOLID-STATE ELECTRONICS | 1961年 / 2卷 / 04期

关键词：

D O I：

10.1016/0038-1101(61)90041-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：216 / &

相关论文

共 50 条

[31] DIFFUSED-BASE PUNCHTHROUGH AVALANCHE TRANSISTORS
KANI, K
KAWAJI, A
FUKINO, K
ELECTRONICS & COMMUNICATIONS IN JAPAN, 1966, 49 (02): : 89 - &
[32] VERSATILE DIFFUSION FURNACE HEATING ELEMENTS AID IN LOW-COST CONTINUOUS PROCESSING OF DIFFUSED SILICON TRANSISTORS
JOHANSSO.PO
SEMICONDUCTOR PRODUCTS AND SOLID STATE TECHNOLOGY, 1966, 9 (10): : 53 - &
[33] AN INVESTIGATION OF DIFFUSED JUNCTIONS IN SILICON .2. DOUBLE DIFFUSED JUNCTIONS
KANNAM, PJ
BALODIS, V
BERMAN, AH
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (08) : C196 - C196
[34] ESTIMATION OF JUNCTION DEPTHS IN DOUBLE-DIFFUSED TRANSISTORS
THOMAS, RE
BOOTHROYD, AR
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (12): : 1944 - +
[35] UNIFORMITY OF PHOSPHORUS EMITTER CONCENTRATION FOR SHALLOW DIFFUSED TRANSISTORS
PAREKH, PC
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (02) : 173 - &
[36] HIGH-FREQUENCY BREAKDOWN IN DIFFUSED TRANSISTORS - REPLY
CHOMA, J
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (11) : 1225 - &
[37] DESIGN OF DIFFUSED JUNCTION SILICON DIODES
VELORIC, HS
SMITH, KD
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1956, 103 (03) : C60 - C60
[38] DISTRIBUTION PROFILES OF DIFFUSED LAYERS IN SILICON
ARORA, ND
ROULSTON, DJ
CHAMBERLAIN, SG
SOLID-STATE ELECTRONICS, 1982, 25 (09) : 965 - 967
[39] SERIES RESISTANCE OF DIFFUSED SILICON VARACTORS
KLAMKA, J
BULLETIN DE L ACADEMIE POLONAISE DES SCIENCES-SERIE DES SCIENCES TECHNIQUES, 1966, 14 (05): : 491 - &
[40] Photoluminescence of erbium-diffused silicon
Horiguchi, H
Kinone, T
Saito, R
Kimura, T
Ikoma, T
RARE EARTH DOPED SEMICONDUCTORS II, 1996, 422 : 81 - 86

← 1 2 3 4 5 →