MOLTEN DIFFUSED SILICON TRANSISTORS

被引：3

|

作者：

TAUCHI, S

机构：

来源：

SOLID-STATE ELECTRONICS | 1961年 / 2卷 / 04期

关键词：

D O I：

10.1016/0038-1101(61)90041-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：216 / &

相关论文

共 50 条

[21] DEPLETION LAYER CALCULATIONS OF SIMULTANEOUSLY-DIFFUSED DOUBLE-DIFFUSED AND TRIPLE-DIFFUSED TRANSISTORS
KANNAM, PJ
INTERNATIONAL JOURNAL OF ELECTRONICS, 1965, 19 (06) : 587 - &
[22] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON
IRVIN, JC
BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +
[23] TECHNOLOGY OF MICRO-ALLOY DIFFUSED TRANSISTORS
THORNTON, CG
ANGELL, JB
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1166 - 1176
[24] DISTRIBUTION OF DIFFUSED PHOSPHORUS IN SILICON
MIKHAILOVA, DN
KASABOV, ID
SOVIET PHYSICS-SOLID STATE, 1962, 4 (06): : 1228 - 1229
[25] DETERMINATION OF A PHYSICAL MODEL FOR DOUBLE DIFFUSED TRANSISTORS
THOMAS, RE
BOOTHROYD, AR
SOLID-STATE ELECTRONICS, 1968, 11 (03) : 365 - +
[26] LIFETIME PRESERVATION IN DIFFUSED SILICON
WALDNER, M
SIVO, L
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (04) : 298 - 301
[27] INFLUENCE OF DISLOCATIONS ON PROPERTIES OF SHALLOW DIFFUSED TRANSISTORS
PLANTINGA, GH
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (04) : 394 - +
[28] IMPROVED METALIZATION PROCESS FOR SHALLOW DIFFUSED TRANSISTORS
BELLIER, SP
EHLERT, LB
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) : C96 - &
[29] STATISTICAL APPROACH TO DESIGN OF DIFFUSED JUNCTION TRANSISTORS
KENNEDY, DP
OBRIEN, RR
MURLEY, PC
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (05) : 482 - &
[30] EMITTER CAPACITY CALCULATIONS FOR DOUBLE DIFFUSED TRANSISTORS
LAWRENCE, H
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (01): : 86 - &

← 1 2 3 4 5 →