EFFECTS OF SURFACE RECOMBINATION AND GEOMETRY IN ALLOY JUNCTION TRANSISTORS

被引：1
|
作者：
JAIN, AK
BHATNAGAR, SK
SRIVASTAVA, GP
机构：
来源：
SOLID-STATE ELECTRONICS | 1971年 / 14卷 / 06期
关键词：
D O I：
10.1016/0038-1101(71)90054-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：451 / +
页数：1
相关论文
共 50 条
  • [41] DETERMINATION OF BASE RECOMBINATION LIFETIME AND SURFACE RECOMBINATION VELOCITY AT N-N+ INTERFACE OF EPITAXIAL TRANSISTORS
    SRIVASTAVA, A
    BHATTACHARYYA, AB
    SOLID-STATE ELECTRONICS, 1978, 21 (08) : 1089 - 1090
  • [42] SURFACE RECOMBINATION AND INTERNAL CURRENTS IN A VERTICAL-JUNCTION SOLAR CELL
    DHARIWAL, SR
    KOTHARI, LS
    JAIN, SC
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (11) : 1321 - 1332
  • [43] SURFACE RECOMBINATION EFFECTS ON THE PERFORMANCE OF N+P STEP AND DIFFUSED JUNCTION SILICON SOLAR-CELLS
    ARORA, JD
    SINGH, SN
    MATHUR, PC
    SOLID-STATE ELECTRONICS, 1981, 24 (08) : 739 - 747
  • [44] EFFECTS OF SPACE-CHARGE LAYER WIDENING IN JUNCTION TRANSISTORS
    EARLY, JM
    PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1401 - 1406
  • [45] Neutron flux effects in silicon based bipolar junction transistors
    Wu, Kunlin
    Li, Junjie
    Zou, Dehui
    Lu, Yi
    Feng, Jiaming
    Lv, Xueyang
    Qiu, Dong
    Fan, Xiaoqiang
    Xu, Xianguo
    Wu, Jian
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2019, 913 : 85 - 90
  • [46] RADIATION EFFECTS IN GAAS JUNCTION FIELD-EFFECT TRANSISTORS
    ZULEEG, R
    LEHOVEC, K
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (05) : 1343 - 1354
  • [47] EFFECTS OF ELECTRON BOMBARDMENT ON SHOT NOISE OF SILICON JUNCTION TRANSISTORS
    KERNS, DV
    CHEN, TM
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (05) : 37 - +
  • [48] Radiation and temperature effects on the switching characteristics of junction bipolar transistors
    Kamh, S.A.
    Montasser, K.I.
    Soliman, F.A.S.
    Abd El-Maksood, A.M.
    Modelling, Measurement and Control A, 2001, 74 (3-4): : 13 - 28
  • [49] NEUTRON RADIATION EFFECTS IN JUNCTION FIELD-EFFECT TRANSISTORS
    NAIK, SS
    OLDHAM, WG
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (05) : 9 - +
  • [50] PROPERTIES OF JUNCTION TRANSISTORS
    KIRCHER, RJ
    IRE TRANSACTIONS ON AUDIO, 1955, 3 (04): : 107 - 124
12345