EFFECTS OF SPACE-CHARGE LAYER WIDENING IN JUNCTION TRANSISTORS

被引：177
作者：
EARLY, JM
机构：
来源：
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1952年 / 40卷 / 11期
关键词：
D O I：
10.1109/JRPROC.1952.273969
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1401 / 1406
页数：6
相关论文
共 4 条
[1]   P-N JUNCTION TRANSISTORS [J].
SHOCKLEY, W ;
SPARKS, M ;
TEAL, GK .
PHYSICAL REVIEW, 1951, 83 (01) :151-162
[2]   THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J].
SHOCKLEY, W .
BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :435-489
[3]   SOME CIRCUIT PROPERTIES AND APPLICATIONS OF NORMAL-PARA-NORMAL TRANSISTORS [J].
WALLACE, RL ;
PIETENPOL, WJ .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1951, 39 (07) :753-767
[4]   SOME CIRCUIT PROPERTIES AND APPLICATIONS OF N-P-N TRANSISTORS [J].
WALLACE, RL ;
PIETENPOL, WJ .
BELL SYSTEM TECHNICAL JOURNAL, 1951, 30 (03) :530-563
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