SCHOTTKY-BARRIER HEIGHT OF SINGLE-CRYSTAL NICKEL DISILICIDE SILICON INTERFACES

被引：24
|
作者：
KIKUCHI, A
OHSHIMA, T
SHIRAKI, Y
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 09期
关键词：
D O I：
10.1063/1.341239
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4614 / 4617
页数：4
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