SCHOTTKY-BARRIER HEIGHT OF SINGLE-CRYSTAL NICKEL DISILICIDE SILICON INTERFACES

被引：24

|

作者：

KIKUCHI, A

OHSHIMA, T

SHIRAKI, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 09期

关键词：

D O I：

10.1063/1.341239

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4614 / 4617

页数：4

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