UNSTRAINED VS STRAINED LAYER EPITAXY - THICK GE LAYERS AND GE/SI SUPERLATTICES ON SI(100)

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作者：

OSPELT, M

MADER, KA

BACSA, W

HENZ, J

VONKANEL, H

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来源：

HETEROSTRUCTURES ON SILICON : ONE STEP FURTHER WITH SILICON | 1989年 / 160卷

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TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

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页码：129 / 136

页数：8

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