UNSTRAINED VS STRAINED LAYER EPITAXY - THICK GE LAYERS AND GE/SI SUPERLATTICES ON SI(100)

被引：0
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作者：
OSPELT, M
MADER, KA
BACSA, W
HENZ, J
VONKANEL, H
机构：
来源：
HETEROSTRUCTURES ON SILICON : ONE STEP FURTHER WITH SILICON | 1989年 / 160卷
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：129 / 136
页数：8
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