LOW-ENERGY ELECTRON-DIFFRACTION STUDY OF SURFACE REACTIONS OF GERMANIUM WITH OXYGEN AND WITH IODINE .2.

被引：41
作者：
LANDER, JJ
MORRISON, J
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1963年 / 34卷 / 05期
关键词：
D O I：
10.1063/1.1729591
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1411 / &
相关论文
共 11 条
[1]  
ARTHUR JR, PRIVATE COMMUNICATIO
[2]   THE DIFFUSION OF OXYGEN IN SILICON AND GERMANIUM [J].
HAAS, C .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) :108-111
[3]   OXYGEN ADSORPTION ON SILICON AND GERMANIUM [J].
HAGSTRUM, HD .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (06) :1020-&
[4]   THE EQUILIBRIUM GE(S) + GEO2(S) = 2GEO(G) - THE HEAT OF FORMATION OF GERMANIC OXIDE [J].
JOLLY, WL ;
LATIMER, WM .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1952, 74 (22) :5757-5758
[5]   SOLUBILITY OF OXYGEN IN GERMANIUM [J].
KAISER, W ;
THURMOND, CD .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) :115-&
[6]   LOW VOLTAGE ELECTRON DIFFRACTION STUDY OF OXIDATION AND REDUCTION OF SILICON [J].
LANDER, JJ ;
MORRISON, J .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (06) :2089-&
[7]   STRUCTURES OF CLEAN SURFACES OF GERMANIUM AND SILICON .1. [J].
LANDER, JJ ;
MORRISON, J .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (05) :1403-&
[8]   LOW-ENERGY ELECTRON DIFFRACTION STUDY OF SILICON SURFACE STRUCTURES [J].
LANDER, JJ ;
MORRISON, J .
JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (04) :729-&
[9]   IMPROVED DESIGN AND METHOD OF OPERATION OF LOW ENERGY ELECTRON DIFFRACTION EQUIPMENT [J].
LANDER, JJ ;
MORRISON, J ;
UNTERWALD, F .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1962, 33 (07) :782-+
[10]   The structure of germanous iodide [J].
Powell, HM ;
Brewee, M .
JOURNAL OF THE CHEMICAL SOCIETY, 1938, :197-198
12