SINGLE-CRYSTAL-ALUMINUM SCHOTTKY-BARRIER DIODES PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) ON GAAS

被引：178
作者：
CHO, AY
DERNIER, PD
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 06期
关键词：
D O I：
10.1063/1.325286
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：3328 / 3332
页数：5
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