IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY

被引：153
作者：
CHO, AY [1 ]
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源：
JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 04期
关键词：
D O I：
10.1063/1.321777
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1733 / 1735
页数：3
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