ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS IN SILICON BY DIFFERENTIAL CAPACITANCE TECHNIQUE

被引：170
作者：
KENNEDY, DP
MURLEY, PC
KLEINFELDER, W
机构：
来源：
IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1968年 / 12卷 / 05期
关键词：
D O I：
10.1147/rd.125.0399
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
引用
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页码：399 / +
页数：1
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