PLANAR ISOLATED GAAS DEVICES PRODUCED BY MOLECULAR-BEAM EPITAXY

被引：37
|
作者：
BALLAMY, WC
CHO, AY
机构：
[1] BELL TEL LABS INC,READING,PA 19604
[2] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 04期
关键词：
D O I：
10.1109/T-ED.1976.18431
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：481 / 484
页数：4
相关论文
共 50 条
  • [1] GAAS PLANAR TECHNOLOGY BY MOLECULAR-BEAM EPITAXY (MBE)
    CHO, AY
    BALLAMY, WC
    JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) : 783 - 785
  • [2] PREPARATION AND PROPERTIES OF GAAS DEVICES BY MOLECULAR-BEAM EPITAXY
    CHO, AY
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) : C262 - C262
  • [3] PREPARATION AND PROPERTIES OF GAAS DEVICES BY MOLECULAR-BEAM EPITAXY
    CHO, AY
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 : 435 - 442
  • [4] PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY
    MALIK, RJ
    AUCOIN, TR
    ROSS, RL
    BOARD, K
    WOOD, CEC
    EASTMAN, LF
    ELECTRONICS LETTERS, 1980, 16 (22) : 836 - 837
  • [5] PLANAR DOPED BARRIERS BY MOLECULAR-BEAM EPITAXY FOR MILLIMETER WAVE DEVICES
    MALIK, RJ
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1981, 317 : 243 - 250
  • [6] THE GROWTH OF GAALAS GAAS GUIDED WAVE DEVICES BY MOLECULAR-BEAM EPITAXY
    ANDREWS, DA
    SCOTT, EG
    HOUGHTON, AJN
    RODGERS, PM
    DAVIES, GJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (03): : 813 - 815
  • [7] GAAS/GE/GAAS HETEROSTRUCTURES BY MOLECULAR-BEAM EPITAXY
    STRITE, S
    UNLU, MS
    ADOMI, K
    GAO, GB
    AGARWAL, A
    ROCKETT, A
    MORKOC, H
    LI, D
    NAKAMURA, Y
    OTSUKA, N
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (05): : 1131 - 1140
  • [8] SI ATOMIC-PLANAR-DOPING IN GAAS MADE BY MOLECULAR-BEAM EPITAXY
    SASA, S
    MUTO, S
    KONDO, K
    ISHIKAWA, H
    HIYAMIZU, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08): : L602 - L604
  • [9] STABILITY OF SI ATOMIC PLANAR DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    ASHIZAWA, Y
    SUGIYAMA, N
    NAKANISI, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 770 - 770
  • [10] ERBIUM DOPING OF GAAS IN MOLECULAR-BEAM EPITAXY
    CHARASSE, MN
    GALTIER, P
    LEMAIRE, F
    HIRTZ, JP
    HUBER, AM
    GRATTEPAIN, C
    LAGORSSE, O
    CHAZELAS, J
    VODJANI, N
    WEISBUCH, C
    VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1988, 43 (241): : 185 - 186
12345