TEM AND RBS STUDIES OF EPITAXIAL COSI2 LAYERS FORMED BY HIGH-DOSE COBALT IMPLANTATION INTO SILICON

被引：0
|
作者：
REESON, KJ
DEVEIRMAN, A
GWILLIAM, R
JEYNES, C
SEALY, BJ
VANLANDUYT, J
机构：
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1989 | 1989年 / 100卷
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：627 / 634
页数：8
相关论文
共 50 条
  • [41] FORMATION OF BURIED COSI2 LAYERS BY ION-IMPLANTATION AND THEIR STABILITY AT HIGH-TEMPERATURES
    WU, MF
    VANTOMME, A
    PATTYN, H
    LANGOUCHE, G
    MAEX, K
    VANHELLEMONT, J
    APPLIED SURFACE SCIENCE, 1989, 38 (1-4) : 217 - 224
  • [42] SYNTHESIS OF SILICON DIOXIDE LAYERS BY HIGH-DOSE ION-IMPLANTATION
    GILL, SS
    RADIATION EFFECTS LETTERS, 1984, 85 (02): : 67 - 74
  • [43] A SIMS AND TEM ANALYSIS OF THE GROWTH MECHANISMS OF ANNEALED BURIED SIO2 LAYERS FORMED BY INCREMENTAL HIGH-DOSE OXYGEN ION-IMPLANTATION INTO SILICON AT 150 KEV
    GRIFFIN, CJ
    KILNER, JA
    CHATER, RJ
    STATONBEVAN, A
    REESON, KJ
    HEMMENT, PLF
    DAVIS, JR
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4): : 215 - 219
  • [44] AES AND SIMS PROFILING OF BURIED SILICIDE LAYERS FORMED BY 6 MEV HIGH-DOSE NICKEL IMPLANTATION INTO SILICON
    SCHONBORN, A
    LINDNER, JKN
    KAAT, EHT
    BUBERT, H
    GRASSERBAUER, M
    FRIEDBACHER, G
    FRESENIUS ZEITSCHRIFT FUR ANALYTISCHE CHEMIE, 1989, 333 (4-5): : 511 - 515
  • [45] FORMATION OF BURIED IRON-COBALT-SILICIDE LAYERS BY HIGH-DOSE IMPLANTATION
    PANKNIN, D
    WIESER, E
    SKORUPA, W
    VOHSE, H
    ALBRECHT, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 74 (1-2): : 213 - 217
  • [46] THE EFFECT OF DOSE ON THE GROWTH OF BURIED COSI2 LAYERS IN (111) AND (100) SI PRODUCED BY ION-IMPLANTATION
    MANTL, S
    JEBASINSKI, R
    HARTMANN, D
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 666 - 670
  • [47] HIGH-DOSE CARBON ION-IMPLANTATION STUDIES IN SILICON
    SRIKANTH, K
    CHU, M
    ASHOK, S
    NGUYEN, N
    VEDAM, K
    THIN SOLID FILMS, 1988, 163 : 323 - 329
  • [48] PRECIPITATION STUDIES IN OXYGEN-RICH AND NITROGEN-RICH SILICON FORMED BY HIGH-DOSE IMPLANTATION
    WEBER, R
    MULLER, R
    SKORUPA, W
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 84 (02): : 286 - 290
  • [49] Spectroscopic characterization of phases formed by high-dose carbon ion implantation in silicon
    1600, American Inst of Physics, Woodbury, NY, USA (77):
  • [50] EBIC STUDY OF SILICON ON INSULATOR STRUCTURES FORMED BY HIGH-DOSE NITROGEN IMPLANTATION
    KWOR, R
    MATSON, RJ
    ALJASSIM, MM
    POLCHLOPEK, S
    HEMMENT, PLF
    REESON, KJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (03) : 876 - 878
12345