TEM AND RBS STUDIES OF EPITAXIAL COSI2 LAYERS FORMED BY HIGH-DOSE COBALT IMPLANTATION INTO SILICON

被引：0
|
作者：
REESON, KJ
DEVEIRMAN, A
GWILLIAM, R
JEYNES, C
SEALY, BJ
VANLANDUYT, J
机构：
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1989 | 1989年 / 100卷
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：627 / 634
页数：8
相关论文
共 50 条
  • [31] Epitaxial CoSi2 layers fabricated by a single-step technique of high-current co-ion implantation
    Zhu, HN
    Liu, BX
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1999, 32 (23) : L119 - L123
  • [32] THE EVOLUTION OF THE SI/SIO2 INTERFACE IN BURIED OXIDE LAYERS FORMED BY HIGH-DOSE OXYGEN IMPLANTATION INTO SILICON
    CHATER, RJ
    KILNER, JA
    HEMMENT, PLF
    REESON, KJ
    DAVIS, JR
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 290 - 293
  • [33] BURIED, EPITAXIAL COSI2 FORMED BY ION-IMPLANTATION - A PRELIMINARY-STUDY OF THE EFFECTS OF NUCLEATION ON MICROSTRUCTURE
    MCGINN, JT
    NAMAVAR, F
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (07) : 48 - 48
  • [34] CHARACTERIZATION OF GESI LAYERS FORMED BY HIGH-DOSE GE IMPLANTATION INTO SI
    CHEUNG, WY
    WONG, SP
    WILSON, IH
    ZHANG, TH
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 101 (03): : 243 - 246
  • [35] Complementary study of the internal porous silicon layers formed under high-dose implantation of helium ions
    A. A. Lomov
    A. V. Myakon’kikh
    Yu. M. Chesnokov
    A. A. Shemukhin
    A. P. Oreshko
    Crystallography Reports, 2017, 62 : 189 - 194
  • [36] Complementary study of the internal porous silicon layers formed under high-dose implantation of helium ions
    Lomov, A. A.
    Myakon'kikh, A. V.
    Chesnokov, Yu. M.
    Shemukhin, A. A.
    Oreshko, A. P.
    CRYSTALLOGRAPHY REPORTS, 2017, 62 (02) : 189 - 194
  • [37] Spectroscopic ellipsometry studies of buried CoSi2 layers in Si formed by ion implantation with a metal vapor vacuum arc ion source
    Guo, WS
    THIN SOLID FILMS, 2000, 375 (1-2) : 280 - 283
  • [38] Spectroellipsometric study of optical and electrical properties of buried CoSi2, layers in silicon produced by MEVVA implantation
    Guo, WS
    Wong, SP
    Zhu, ZQ
    AUTOMATED OPTICAL INSPECTION FOR INDUSTRY: THEORY, TECHNOLOGY, AND APPLICATIONS II, 1998, 3558 : 561 - 570
  • [39] PROPERTIES OF SOI STRUCTURES FORMED BY HIGH-DOSE OXYGEN IMPLANTATION INTO SILICON
    LU, DT
    LU, WX
    WANG, ZL
    DU, YC
    ZHENG, HD
    MO, D
    LIANG, ZN
    VACUUM, 1989, 39 (2-4) : 219 - 221
  • [40] Nanostructured COSi2 layers formed on Si with high density Co+ ion beams
    Gerasimenko, NN
    Troitski, VY
    Pavluchenko, MN
    Djamanbalin, KK
    SURFACE & COATINGS TECHNOLOGY, 2002, 158 : 416 - 420
12345