TEM AND RBS STUDIES OF EPITAXIAL COSI2 LAYERS FORMED BY HIGH-DOSE COBALT IMPLANTATION INTO SILICON

被引：0
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作者：
REESON, KJ
DEVEIRMAN, A
GWILLIAM, R
JEYNES, C
SEALY, BJ
VANLANDUYT, J
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MICROSCOPY OF SEMICONDUCTING MATERIALS 1989 | 1989年 / 100卷
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T [工业技术];
学科分类号：
08 ;
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页码：627 / 634
页数：8
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