FABRICATION AND CHARACTERIZATION OF MULTILEVEL LATERAL NANO-DEVICES

被引：4

作者：

TAYLOR, RP ^{[1
]}

FENG, Y ^{[1
]}

SACHRAJDA, AS ^{[1
]}

ADAMS, JA ^{[1
]}

DAVIES, M ^{[1
]}

COLERIDGE, PT ^{[1
]}

ZAWADSKI, P ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA,IMS,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

SURFACE SCIENCE | 1994年 / 305卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(94)90971-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The design of surface gate patterns, used to define nanostructures in AlGaAs/GaAs heterostructures, is greatly enhanced by the possibility of establishing electrical contact to, and independently biasing, a 100 nm wide isolated gate. We describe the fabrication of a multi-level metallisation architecture which can be used to contact a nanoscale central gate and monitor the transition from a quantum dot to ring geometry. We employ geometry induced quantum interference effects as a novel low temperature characterisation tool and report experiments in which the central electrode acts as an artificial impurity.

引用

页码：648 / 653

页数：6

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