DEVELOPMENT OF HIGH-PRESSURE, HIGH-TEMPERATURE TECHNIQUE FOR GROWING SINGLE-CRYSTALS FROM FLUX

被引：1

作者：

MROCZKOWSKI, S ^{[1
]}

机构：

[1] YALE UNIV, DEPT ENGN & APPL SCI, NEW HAVEN, CT 06520 USA

来源：

关键词：

D O I：

10.1016/0022-0248(74)90406-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：683 / 687

页数：5

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