DEVELOPMENT OF HIGH-PRESSURE, HIGH-TEMPERATURE TECHNIQUE FOR GROWING SINGLE-CRYSTALS FROM FLUX

被引：1
|
作者：
MROCZKOWSKI, S [1 ]
机构：
[1] YALE UNIV, DEPT ENGN & APPL SCI, NEW HAVEN, CT 06520 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 1974年 / 24卷 / OCT期
关键词：
D O I：
10.1016/0022-0248(74)90406-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：683 / 687
页数：5
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