HIGH-PERFORMANCE FULLY DEPLETED SILICON-ON-INSULATOR TRANSISTORS

Thin single-crystal silicon-on-insulator films with defect densities as low as 8 × 105; dislocations/cm2 were formed by implantation of 1.5 × 1018 O+ /cm2 at 150 kV into bare silicon and annealing at 1350°C for 6 h in nitrogen. Thin-film submicrometer MOS transistors were fabricated with self-aligned TiSi2 fully covering sources, drains, and gates, and with p+ and n+ polysilicon gates for PMOS and NMOS transistors, respectively, but without a lightly doped drain. Transistors with gate lengths as short as 0.4 µm exhibited essentially long-channel behavior with no kink and with a high saturation current. The device physics was investigated using PISCES simulations, which agreed well with the experimental results. A ring-oscillator stage delay of 58 ps was obtained for 1.0-µm gate length CMOS circuits operating at 5 V. © 1990 IEEE