DIFFUSION OF GE IN GAAS AT SIO2-ENCAPSULATED GE-GAAS INTERFACES

被引：7
|
作者：
KAVANAGH, KL [1 ]
MAGEE, CW [1 ]
机构：
[1] RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540
来源：
CANADIAN JOURNAL OF PHYSICS | 1987年 / 65卷 / 08期
关键词：
D O I：
10.1139/p87-157
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：987 / 990
页数：4
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