DIFFUSION OF GE IN GAAS AT SIO2-ENCAPSULATED GE-GAAS INTERFACES

被引：7

作者：

KAVANAGH, KL ^{[1
]}

MAGEE, CW ^{[1
]}

机构：

[1] RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540

来源：

关键词：

D O I：

10.1139/p87-157

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：987 / 990

页数：4

共 50 条

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