DOPANT ACTIVATION AND HALL-MOBILITY IN B-IMPLANTED AND AS-IMPLANTED POLYSILICON FILMS AFTER RAPID OR CONVENTIONAL THERMAL ANNEALING

被引：9

作者：

JEANJEAN, P ^{[1
]}

SELLITTO, P ^{[1
]}

SICART, J ^{[1
]}

ROBERT, JL ^{[1
]}

CHAUSSEMY, G ^{[1
]}

LAUGIER, A ^{[1
]}

机构：

[1] INST NATL SCI APPL,PHYS MAT LAB,LA 358,F-69621 VILLEURBANNE,FRANCE

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 12期

关键词：

D O I：

10.1088/0268-1242/6/12/005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the electrical properties of polycrystalline silicon films implanted with boron or arsenic ions at doses 4 x 10(14), 8 x 10(14) and 5 x 10(15) cm-2. After ion implantation, a rapid thermal annealing (RTA) or a conventional thermal annealing (CTA) was performed to activate the dopant. A comparison between the two types of annealed layer is made by performing Hall measurements. We find that RTA improves the electrical properties of the polycrystalline silicon layers. Moreover, the B-implanted films have the largest dopant activation and mobility. The density of trapping centres at grain boundaries (GBs) is derived from electrical measurements. We find that it depends strongly on the implantation dose and slightly on the annealing conditions except for the CTA As-implanted films in which it decreases due to As segregation at GBs.

引用

页码：1130 / 1134

页数：5

共 50 条

[31] RAPID THERMAL ANNEALING OF ION-IMPLANTED TI FILMS ON SI
PRAMANIK, D
DEAL, M
SAXENA, AN
WU, OK
PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1985, 530 : 159 - 164
[32] Study of B+ -implanted HgCdTe under rapid thermal annealing
Liu, Jia-Lu
Zhang, Ting-Qing
Feng, Jian-Hua
Zhou, Guan-Shan
Ying, Ming-Jiong
Wuli Xuebao/Acta Physica Sinica, 47 (01):
[33] Photoluminescence Study on Ion Implanted Silicon after Rapid Thermal Annealing
Takashima, Shuhei
Yoshimoto, Masahiro
Yoo, Woo Sik
ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 5: NEW MATERIALS, PROCESSES, AND EQUIPMENT, 2009, 19 (01): : 147 - +
[34] Tuned photoluminescence from Si+-implanted SiO2 films with rapid and conventional thermal annealing
Tsai, Jen-Hwan
VACUUM, 2012, 86 (12) : 1983 - 1987
[35] CHARACTERIZATION OF BF2+ AND B+ IMPLANTED SILICON AFTER RAPID THERMAL ANNEALING
LI, YH
POGANY, AP
HARRISON, HB
WILLIAMS, JS
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 521 - 525
[36] DOPANT ACTIVATION AND REDISTRIBUTION IN AS+-IMPLANTED POLYCRYSTALLINE SI BY RAPID THERMAL-PROCESSING
POWELL, RA
CHOW, R
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (01) : 194 - 198
[37] Symmetric Multicycle Rapid Thermal Annealing: Enhanced Activation of Implanted Dopants in GaN
Greenlee, Jordan D.
Feigelson, Boris N.
Anderson, Travis J.
Hite, Jennifer K.
Hobart, Karl D.
Kub, Francis J.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2015, 4 (09) : P382 - P386
[38] Electrical activation of bismuth implanted into silicon by rapid thermal annealing and kinetics of defects
de, Souza, J.P.
Fichtner, P.F.P.
1600, (74):
[39] ELECTRICAL ACTIVATION OF IMPLANTED BE, MG, ZN, AND CD IN GAAS BY RAPID THERMAL ANNEALING
PEARTON, SJ
CUMMINGS, KD
VELLACOLEIRO, GP
JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) : 3252 - 3254
[40] ELECTRICAL ACTIVATION OF BORON-IMPLANTED SILICON DURING RAPID THERMAL ANNEALING
LANDI, E
ARMIGLIATO, A
SOLMI, S
KOGLER, R
WIESER, E
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 47 (04): : 359 - 366

← 1 2 3 4 5 →