DOPANT ACTIVATION AND HALL-MOBILITY IN B-IMPLANTED AND AS-IMPLANTED POLYSILICON FILMS AFTER RAPID OR CONVENTIONAL THERMAL ANNEALING

被引：9

作者：

JEANJEAN, P ^{[1
]}

SELLITTO, P ^{[1
]}

SICART, J ^{[1
]}

ROBERT, JL ^{[1
]}

CHAUSSEMY, G ^{[1
]}

LAUGIER, A ^{[1
]}

机构：

[1] INST NATL SCI APPL,PHYS MAT LAB,LA 358,F-69621 VILLEURBANNE,FRANCE

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 12期

关键词：

D O I：

10.1088/0268-1242/6/12/005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the electrical properties of polycrystalline silicon films implanted with boron or arsenic ions at doses 4 x 10(14), 8 x 10(14) and 5 x 10(15) cm-2. After ion implantation, a rapid thermal annealing (RTA) or a conventional thermal annealing (CTA) was performed to activate the dopant. A comparison between the two types of annealed layer is made by performing Hall measurements. We find that RTA improves the electrical properties of the polycrystalline silicon layers. Moreover, the B-implanted films have the largest dopant activation and mobility. The density of trapping centres at grain boundaries (GBs) is derived from electrical measurements. We find that it depends strongly on the implantation dose and slightly on the annealing conditions except for the CTA As-implanted films in which it decreases due to As segregation at GBs.

引用

页码：1130 / 1134

页数：5

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