Growth of microcrystallites in thin silicon films prepared by PECVD

被引：0
|
作者：
Luysberg, M
Hapke, P
Finger, F
Carius, R
机构：
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1995 | 1995年 / 146卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Microcrystalline silicon prepared by plasma enhanced chemical vapour deposition consists of variable volume fractions of amorphous phase, grain boundaries and crystalline grains. To study the influence of the microstructure on the electrical transport properties a set of samples is investigated, in the as-deposited state and after annealing, by transmission electron microscopy and Raman spectroscopy. The changes of the microstructure due to different growth conditions and upon annealing and its relation to the conductivity give evidence for percolation processes dominating the electrical transport.
引用
收藏
页码：507 / 510
页数：4
相关论文
共 50 条
  • [41] Growth of pure ZnO thin films prepared by chemical spray pyrolysis on silicon
    Ayouchi, R
    Martin, F
    Leinen, D
    Ramos-Barrado, JR
    JOURNAL OF CRYSTAL GROWTH, 2003, 247 (3-4) : 497 - 504
  • [42] Investigation on oxide growth mechanism of PECVD silicon carbide films
    Choi, WK
    Leoy, CC
    Lee, LP
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2002, 16 (6-7): : 1062 - 1066
  • [43] Dynamics of low temperature PECVD growth of microcrystalline silicon thin films:: Impact of substrate surface treatments
    Losurdo, M.
    Giangregorio, M. M.
    Sacchetti, A.
    Capezzuto, P.
    Bruno, G.
    Carabe, J.
    Gandia, J. J.
    Urbina, L.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) : 906 - 910
  • [44] Effect of oligomers on the growth of amorphous silicon films in a PECVD reactor
    Yu. E. Gorbachev
    Technical Physics, 2006, 51 : 733 - 739
  • [45] Influence of annealing on microstructure and piezoresistive properties of boron-doped hydrogenated nanocrystalline silicon thin films prepared by PECVD
    Haibin Pan
    Jianning Ding
    Guanggui Cheng
    Journal of Materials Science: Materials in Electronics, 2015, 26 : 5353 - 5359
  • [46] Experimental Investigation of Microstructure and Piezoresistive Properties of Phosphorus-doped Hydrogenated Nanocrystalline Silicon Thin Films Prepared by PECVD
    Pan, Haibin
    Ding, Jianning
    Cheng, Guanggui
    Cao, Baoguo
    MICRO-NANO TECHNOLOGY XV, 2014, 609-610 : 208 - +
  • [47] Effect of oligomers on the growth of amorphous silicon films in a PECVD reactor
    Gorbachev, Yu. E.
    TECHNICAL PHYSICS, 2006, 51 (06) : 733 - 739
  • [48] Optical properties of amorphous silicon nitride thin-films prepared by VHF-PECVD using silane and nitrogen
    Tan, Wee Chong
    Kobayashi, S.
    Aoki, T.
    Johanson, Robert E.
    Kasap, S. O.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2009, 20 : 15 - 18
  • [49] Polycrystalline silicon thin film solar cells prepared by PECVD-SPC
    Buittrago, R. H.
    Risso, G. A.
    Cutrera, M.
    Battioni, M.
    De Bernardez, L.
    Schmidt, J. A.
    Arce, R. D.
    Koropecki, R. R.
    INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, 2008, 33 (13) : 3522 - 3525
  • [50] Optical properties of amorphous silicon nitride thin-films prepared by VHF-PECVD using silane and nitrogen
    Wee Chong Tan
    S. Kobayashi
    T. Aoki
    Robert E. Johanson
    S. O. Kasap
    Journal of Materials Science: Materials in Electronics, 2009, 20 : 15 - 18
12345