Growth of microcrystallites in thin silicon films prepared by PECVD

被引：0
|
作者：
Luysberg, M
Hapke, P
Finger, F
Carius, R
机构：
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1995 | 1995年 / 146卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Microcrystalline silicon prepared by plasma enhanced chemical vapour deposition consists of variable volume fractions of amorphous phase, grain boundaries and crystalline grains. To study the influence of the microstructure on the electrical transport properties a set of samples is investigated, in the as-deposited state and after annealing, by transmission electron microscopy and Raman spectroscopy. The changes of the microstructure due to different growth conditions and upon annealing and its relation to the conductivity give evidence for percolation processes dominating the electrical transport.
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页码：507 / 510
页数：4
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