Growth of microcrystallites in thin silicon films prepared by PECVD

被引：0
|
作者：
Luysberg, M
Hapke, P
Finger, F
Carius, R
机构：
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1995 | 1995年 / 146卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Microcrystalline silicon prepared by plasma enhanced chemical vapour deposition consists of variable volume fractions of amorphous phase, grain boundaries and crystalline grains. To study the influence of the microstructure on the electrical transport properties a set of samples is investigated, in the as-deposited state and after annealing, by transmission electron microscopy and Raman spectroscopy. The changes of the microstructure due to different growth conditions and upon annealing and its relation to the conductivity give evidence for percolation processes dominating the electrical transport.
引用
收藏
页码：507 / 510
页数：4
相关论文
共 50 条
  • [1] Comparison of growth mechanisms of silicon thin films prepared by HWCVD with PECVD
    Zhou, Yuqin
    Zhou, Bingqing
    Gu, Jinhua
    Zhu, Meifang
    Liu, Fengzhen
    THIN SOLID FILMS, 2008, 516 (05) : 564 - 567
  • [2] Study on the stress of silicon nitride thin films prepared by PECVD
    Yu, Y
    Luo, ZZ
    Weng, XQ
    FIFTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 2004, 5774 : 212 - 215
  • [3] Characterization of hydrogenated amorphous silicon thin films prepared by PECVD
    Zhi-Ming Wu
    Shi-Bin Li
    Wei Li
    Nai-Man Niao
    Ya-Dong Jiang
    Kui-Peng Zhu
    ADVANCED OPTICAL MANUFACTURING TECHNOLOGIES, PTS 1 AND 2, 2007, 6722
  • [4] Boron-doped nanocrystalline silicon thin films prepared by PECVD
    Wang, Xiu-Qin
    Ding, Jian-ning
    Yuan, Ning-Yi
    Wang, Shu-Bo
    MICRO-NANO TECHNOLOGY XIII, 2012, 503 : 386 - +
  • [5] Characterization of silicon carbide thin films prepared by VHF-PECVD technology
    Zhang, S
    Raniero, L
    Fortunato, E
    Pereira, L
    Martins, N
    Canhola, P
    Ferreira, I
    Nedev, N
    Aguas, H
    Martins, R
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 338 : 530 - 533
  • [6] Study of XRD on microcrystalline silicon thin films prepared by RF-PECVD
    Institute of Photo-electronics Thin Film Devices and Technique, College of Information Technical Science, Nankai University, Tianjin 300071, China
    不详
    Rengong Jingti Xuebao, 2007, 3 (545-549):
  • [7] Electronic transport properties of microcrystalline silicon thin films prepared by VHF-PECVD
    S. Okur
    M. Güneş
    O. Göktaş
    F. Finger
    R. Carius
    Journal of Materials Science: Materials in Electronics, 2004, 15 : 187 - 191
  • [8] Electronic transport properties of microcrystalline silicon thin films prepared by VHF-PECVD
    Okur, S
    Günes, M
    Göktas, O
    Finger, F
    Carius, R
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2004, 15 (03) : 187 - 191
  • [9] Properties of amorphous silicon carbide films prepared by PECVD
    Huran, J
    Hrubcin, L
    Kobzev, AP
    Liday, J
    VACUUM, 1996, 47 (10) : 1223 - 1225
  • [10] FTIR spectroscopy of silicon carbide thin films prepared by PECVD technology for solar cell application
    Kleinova, Angela
    Huran, Jozef
    Sasinkova, Vlasta
    Perny, Milan
    Saly, Vladimir
    Packa, Juraj
    RELIABILITY OF PHOTOVOLTAIC CELLS, MODULES, COMPONENTS, AND SYSTEMS VIII, 2015, 9563
12345