PHASE-FORMATION IN ION-BOMBARDED METALLIC-FILMS

被引:8
|
作者
OSSI, PM [1 ]
机构
[1] UNITA CINFM TRENTO, I-38050 TRENT, ITALY
来源
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER | 1994年 / 93卷 / 02期
关键词
D O I
10.1007/BF01316968
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The interplay of several events, ranging from production, migration and interaction of defects, to irradiation enhanced atomic diffusion and chemical mixing, is responsible for phase formation in surface layers of ion bombarded metallic alloys. The problem is so complicated that even the interpretation and the prediction of extreme cases such as the attainment of a crystalline, or a glassy product are presently beyond the possibilities of first principle approaches, and empirical criteria have been proposed to this end. In this work we limit ourselves to the very beginning of phase formation, i.e. the nucleation stage, in the frame of an atomistic model. In a binary alloy, after formation of collision cascades, the relaxation to metastable equilibrium of the locally altered compositional profile due to preferential migration to the cascade-matrix interface of one alloy component, is schematized by charge transfer events As a result, dimers of an effective alloy are formed. Conditions specific of glass and respectively crystal formation are extracted from an analysis of surface and thermochemical properties of starting and effective alloys.
引用
收藏
页码:243 / 250
页数:8
相关论文
共 50 条
  • [31] MICROSTRUCTURE AND PROPERTIES OF ION-BOMBARDED MGF2 THIN-FILMS
    KENNEMORE, CM
    GIBSON, UJ
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 1984, 1 (12): : 1269 - 1269
  • [32] Defect acceptor and donor in ion-bombarded GaN
    Petravic, M
    Coleman, VA
    Kim, KJ
    Kim, B
    Li, G
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2005, 23 (05): : 1340 - 1345
  • [33] Electrodeposition of Zinc on Ion-bombarded Fe Substrates
    Kurosaki, Masao
    Sakashita, Masao
    TETSU TO HAGANE-JOURNAL OF THE IRON AND STEEL INSTITUTE OF JAPAN, 2009, 95 (05): : 406 - 410
  • [34] DEFECT DISTRIBUTIONS IN MEV ION-BOMBARDED SILICON
    HALLEN, A
    SVENSSON, BG
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 106 - 109
  • [35] DEPTH DISTRIBUTION OF DAMAGE IN ION-BOMBARDED MOLYBDENUM
    BRADLEY, ER
    BRIMHALL, JL
    TRANSACTIONS OF THE AMERICAN NUCLEAR SOCIETY, 1977, 26 : 179 - 180
  • [36] SURFACE OXIDATION OF ION-BOMBARDED NIMN ALLOY
    KRASEVEC, V
    NAVINSEK, B
    SURFACE SCIENCE, 1974, 45 (01) : 39 - 44
  • [37] Collisional deexcitation at ion-bombarded surfaces - Comment
    Baragiola, RA
    PHYSICAL REVIEW LETTERS, 1996, 77 (02) : 408 - 408
  • [38] Collisional deexcitation at ion-bombarded surfaces - Reply
    Fine, J
    Szymonski, M
    Kolodziej, J
    Yoshitake, M
    Franzreb, K
    PHYSICAL REVIEW LETTERS, 1996, 77 (02) : 409 - 409
  • [39] Energy spike effects in ion-bombarded GaN
    Kucheyev, S. O.
    Azarov, A. Yu
    Titov, A. I.
    Karaseov, P. A.
    Kuchumova, T. M.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (08)
  • [40] Resonance in the efficiency of the conduction-state formation in ion-bombarded crystalline quartz
    Pichugin, VF
    Frangul'yan, TS
    TECHNICAL PHYSICS LETTERS, 2000, 26 (10) : 861 - 863