SELECTIVE AREA OXIDATION OF SILICON WITH A SCANNING FORCE MICROSCOPE

被引：215

作者：

DAY, HC ^{[1
]}

ALLEE, DR ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,DEPT ELECT ENGN,TEMPE,AZ 85287

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 21期

关键词：

D O I：

10.1063/1.109259

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The use of a scanning force microscope with a metallized tip to do selective area oxidation of silicon is demonstrated. Sub-100 nm lines have been achieved. Removal of the oxide lines with buffered hydrofluoric acid reveals trenches in the silicon consistent with silicon consumption in SiO2 formation.

引用

页码：2691 / 2693

页数：3

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