SELECTIVE AREA OXIDATION OF SILICON WITH A SCANNING FORCE MICROSCOPE

被引：215
|
作者：
DAY, HC [1 ]
ALLEE, DR [1 ]
机构：
[1] ARIZONA STATE UNIV,DEPT ELECT ENGN,TEMPE,AZ 85287
来源：
APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 21期
关键词：
D O I：
10.1063/1.109259
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The use of a scanning force microscope with a metallized tip to do selective area oxidation of silicon is demonstrated. Sub-100 nm lines have been achieved. Removal of the oxide lines with buffered hydrofluoric acid reveals trenches in the silicon consistent with silicon consumption in SiO2 formation.
引用
收藏
页码：2691 / 2693
页数：3
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