GROWTH OF HYDROGENATED AMORPHOUS-SILICON BY AN INDUCTIVE COUPLING GLOW-DISCHARGE REACTOR

被引：1

|

作者：

YOKOTA, K

NAKAYAMA, S

OHNO, Y

KATAYAMA, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 06期

关键词：

D O I：

10.1143/JJAP.26.965

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：965 / 966

页数：2

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