ELECTRONIC STACKING-FAULT STATES IN SILICON

被引：0
|
作者：
PATEL, JR [1 ]
MATTHEISS, LF [1 ]
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1981年 / 26卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：288 / 288
页数：1
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