EDGE PROFILES IN THE PLASMA-ETCHING OF POLYCRYSTALLINE SILICON

被引：34

|

作者：

ADAMS, AC

CAPIO, CD

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 02期

关键词：

D O I：

10.1149/1.2127423

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：366 / 370

页数：5

相关论文

共 50 条

[41] LOW-TEMPERATURE REACTIVE ION ETCHING AND MICROWAVE PLASMA-ETCHING OF SILICON - REPLY
TACHI, S
TSUJIMOTO, K
OKUDAIRA, S
APPLIED PHYSICS LETTERS, 1988, 53 (17) : 1666 - 1667
[42] EFFECT OF HYDROGEN PLASMA TREATMENT ON CF4 PLASMA-ETCHING CHARACTERISTICS OF SINGLE-CRYSTAL, POLYCRYSTALLINE, AND AMORPHOUS-SILICON
AGRAWAL, N
TAREY, RD
CHOPRA, KL
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (04): : 2701 - 2704
[43] EXTREMELY HIGH-SELECTIVE ELECTRON-CYCLOTRON RESONANCE PLASMA-ETCHING FOR PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON
SAMUKAWA, S
SUZUKI, Y
SASAKI, M
APPLIED PHYSICS LETTERS, 1990, 57 (04) : 403 - 405
[44] PLASMA-ETCHING WITH TETRAFLUOROMETHANE AND NITROUS-OXIDE - THE ROLE OF OXYGEN IN THE ETCHING OF SILICON MATERIALS
TZENG, YH
LIN, TH
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (07) : 1443 - 1448
[45] LOW-TEMPERATURE REACTIVE ION ETCHING AND MICROWAVE PLASMA-ETCHING OF SILICON - COMMENT
PELLETIER, J
APPLIED PHYSICS LETTERS, 1988, 53 (17) : 1665 - 1666
[46] ON THE PLASMA-PHYSICS OF PLASMA-ETCHING
BISSCHOPS, TJ
DEHOOG, FJ
PURE AND APPLIED CHEMISTRY, 1985, 57 (09) : 1311 - 1320
[47] RAPID PLASMA-ETCHING OF SILICON, SILICON DIOXIDE AND SILICON-NITRIDE USING MICROWAVE DISCHARGES
RAY, SK
MAITI, CK
CHAKRABORTI, NB
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (04) : 599 - 604
[48] PLASMA-ETCHING OF TITANIUM DISILICIDE
TOMKINS, G
DAVIS, MH
ROSSER, PJ
VACUUM, 1984, 34 (3-4) : 451 - 454
[49] PLASMA-ETCHING IN IC TECHNOLOGY
KALTER, H
VANDEVEN, EPGT
PHILIPS TECHNICAL REVIEW, 1979, 38 (7-8): : 200 - 210
[50] PLASMA-ETCHING OF POLYSILICON AND SILICON DIOXIDE IN A PARALLEL-PLATE REACTOR
MIKUS, O
ACTA PHYSICA SLOVACA, 1985, 35 (03) : 156 - 161

← 1 2 3 4 5 →