HEAT SOURCES AND TEMPERATURE DISTRIBUTION IN INSULATED GATE BIPOLAR TRANSISTORS

被引：5
|
作者：
Board, K. [1 ]
Mawby, P. A. [1 ]
机构：
[1] Univ Coll Swansea, Dept Elect & Elect Engn, Swansea SA2 8PP, W Glam, Wales
来源：
INTERNATIONAL JOURNAL OF NUMERICAL METHODS FOR HEAT & FLUID FLOW | 1992年 / 2卷 / 01期
关键词：
D O I：
10.1108/eb017496
中图分类号：
O414.1 [热力学];
学科分类号：
摘要：
[No abstract available]
引用
收藏
页码：291 / 298
页数：8
相关论文
共 50 条
  • [11] Insulated Gate Bipolar Transistors based on Pure Boron Collectors
    Elsayed, Ahmed
    Dick, Jan Frederik
    Schulze, Joerg
    2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2019, : 343 - 346
  • [12] Protection of insulated gate bipolar transistors against short circuit
    Ramanarayanan, V. (vram@ee.iisc.ernet.in), 2000, Indian Institute of Science (80)
  • [13] Performance assessment of 4H-SiC bipolar junction transistors and insulated gate bipolar transistors
    Balachandran, S.
    Chow, T. P.
    Agarwal, A.
    Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, 527-529 : 1433 - 1436
  • [14] Efficient Thermal-Impedance Simulation of Insulated-Gate Bipolar Transistors Modules on Heat Sinks
    Gradinger, Thomas B.
    Drofenik, Uwe
    JOURNAL OF THERMAL SCIENCE AND ENGINEERING APPLICATIONS, 2013, 5 (04)
  • [15] Mahalanobis Distance Approach for Insulated Gate Bipolar Transistors (IGBT) Diagnostics
    Patil, Nishad
    Das, Diganta
    Pecht, Michael
    NEW WORLD SITUATION: NEW DIRECTIONS IN CONCURRENT ENGINEERING, 2010, : 583 - 591
  • [16] Analytical estimation of breakdown voltage in insulated-gate bipolar transistors
    Chen Zhu
    Petru Andrei
    Journal of Computational Electronics, 2021, 20 : 1202 - 1208
  • [17] Fast Ignitron Trigger Circuit Using Insulated Gate Bipolar Transistors
    Chaplin, Vernon H.
    Bellan, Paul M.
    IEEE TRANSACTIONS ON PLASMA SCIENCE, 2013, 41 (04) : 975 - 979
  • [18] ADVANCED CARRIER DENSITY ENHANCEMENT TECHNOLOGIES IN INSULATED GATE BIPOLAR TRANSISTORS
    Hsu, Wesley Chih-Wei
    Udrea, Florin
    Chen, Ho-Tai
    Lin, Wei-Chieh
    CAS: 2009 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 2009, : 393 - +
  • [19] Identification of Failure Precursor Parameters for Insulated Gate Bipolar Transistors (IGBTs)
    Patil, Nishad
    Das, Diganta
    Goebel, Kai
    Pecht, Michael
    2008 INTERNATIONAL CONFERENCE ON PROGNOSTICS AND HEALTH MANAGEMENT (PHM), 2008, : 25 - +
  • [20] THE EFFECT OF SIPOS ON THE PERFORMANCE OF LATERAL INSULATED GATE BIPOLAR-TRANSISTORS
    CHOW, TP
    PATTANAYAK, DN
    BALIGA, BJ
    ADLER, MS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) : 2359 - 2359
12345