HEAT SOURCES AND TEMPERATURE DISTRIBUTION IN INSULATED GATE BIPOLAR TRANSISTORS

被引：5
|
作者：
Board, K. [1 ]
Mawby, P. A. [1 ]
机构：
[1] Univ Coll Swansea, Dept Elect & Elect Engn, Swansea SA2 8PP, W Glam, Wales
来源：
INTERNATIONAL JOURNAL OF NUMERICAL METHODS FOR HEAT & FLUID FLOW | 1992年 / 2卷 / 01期
关键词：
D O I：
10.1108/eb017496
中图分类号：
O414.1 [热力学];
学科分类号：
摘要：
[No abstract available]
引用
收藏
页码：291 / 298
页数：8
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