EFFECT OF HYDROGEN ON UNDOPED AND LIGHTLY SI-DOPED MOLECULAR-BEAM EPITAXIAL GAAS-LAYERS

被引：24

作者：

PAO, YC ^{[1
]}

LIU, D ^{[1
]}

LEE, WS ^{[1
]}

HARRIS, JS ^{[1
]}

机构：

[1] STANFORD UNIV,SOLID STATE LAB,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 19期

关键词：

D O I：

10.1063/1.96956

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1291 / 1293

页数：3

共 50 条

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