A NEW FAST-RESPONSE HG VAPOR SOURCE FOR HGCDTE MOLECULAR-BEAM EPITAXY GROWTH

被引：10
|
作者：
WAGNER, BK
BENZ, RG
SUMMERS, CJ
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 02期
关键词：
D O I：
10.1116/1.576115
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：295 / 299
页数：5
相关论文
共 50 条
  • [41] COMPOSITION CHARACTERIZATION METHODS FOR HGCDTE EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    ODA, N
    KANNO, T
    SAGA, M
    OIKAWA, R
    MAEJIMA, Y
    JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 193 - 196
  • [42] A study of void defects in metalorganic molecular-beam epitaxy grown HgCdTe
    L. H. Zhang
    C. J. Summers
    Journal of Electronic Materials, 1998, 27 : 634 - 639
  • [43] DOPANT DIFFUSION IN HGCDTE GROWN BY PHOTON ASSISTED MOLECULAR-BEAM EPITAXY
    MYERS, TH
    HARRIS, KA
    YANKA, RW
    MOHNKERN, LM
    WILLIAMS, RJ
    DUDOFF, GK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 1438 - 1443
  • [44] MICROSTRUCTURAL DEFECT REDUCTION IN HGCDTE GROWN BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY
    HARRIS, KA
    MYERS, TH
    YANKA, RW
    MOHNKERN, LM
    GREEN, RW
    OTSUKA, N
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (02): : 1013 - 1019
  • [45] A study of void defects in metalorganic molecular-beam epitaxy grown HgCdTe
    Zhang, LH
    Summers, CJ
    JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (06) : 634 - 639
  • [46] MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF HGCDTE(111)B ON SI(100)
    SPORKEN, R
    LANGE, MD
    SIVANANTHAN, S
    FAURIE, JP
    APPLIED PHYSICS LETTERS, 1991, 59 (01) : 81 - 83
  • [47] STRUCTURE OF NONRECTANGULAR HGCDTE SUPERLATTICES GROWN BY LASER MOLECULAR-BEAM EPITAXY
    CHEUNG, JT
    CIRLIN, EH
    OTSUKA, N
    APPLIED PHYSICS LETTERS, 1988, 53 (04) : 310 - 312
  • [48] GROWTH OF HG1-XZNXTE BY MOLECULAR-BEAM EPITAXY ON A GAAS (100) SUBSTRATE
    SIVANANTHAN, S
    CHU, X
    BOUKERCHE, M
    FAURIE, JP
    APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1291 - 1293
  • [49] SOME COMPARISONS OF CHEMICAL BEAM EPITAXY WITH GAS SOURCE MOLECULAR-BEAM EPITAXY
    DAVIES, GJ
    SKEVINGTON, PJ
    SCOTT, EG
    FRENCH, CL
    FOORD, JS
    JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 999 - 1008
  • [50] TIN PHOSPHIDE AS A PHOSPHORUS BEAM SOURCE FOR MOLECULAR-BEAM EPITAXY
    CHAI, YG
    APPLIED PHYSICS LETTERS, 1984, 45 (09) : 985 - 987
12345