MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF HGCDTE(111)B ON SI(100)

被引：27
|
作者：
SPORKEN, R
LANGE, MD
SIVANANTHAN, S
FAURIE, JP
机构：
[1] Microphysics Laboratory, Department of Physics, University of Illinois at Chicago, Chicago, IL 60680
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 01期
关键词：
D O I：
10.1063/1.105530
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Up to 10-mu-m-thick HgCdTe (111) B films with 3 in. and 5 in. diameter were grown on Si (100) substrates. The films are n type, and Hall mobilities higher than 5 x 10(4) cm2 V-1 s-1 have been measured at 23 K for Cd concentration 0.26. Double-crystal rocking curves of the HgCdTe(333) x-ray diffraction peak with full width at half maximum as low as 180 arcsec were measured, indicating that the crystalline quality of the HgCdTe is significantly better than that of the CdTe. The Cd concentration of these films is very uniform, with a standard deviation of 2.4% of the average concentration for 5 in. samples and 0.6% for 3 in. samples.
引用
收藏
页码：81 / 83
页数：3
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