RAMAN-SCATTERING IN METALLIC SI AND GE UP TO 50 GPA

被引：80
|
作者：
OLIJNYK, H
机构：
[1] Bayerisches Geoinstitut, Universität Bayreuth, W-8580 Bayreuth
来源：
PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 14期
关键词：
D O I：
10.1103/PhysRevLett.68.2232
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Optical phonons in metallic high-pressure phases of Si and Ge were studied up to 50 GPa by Raman scattering. Two Raman bands (LO,TO) were observed in the beta-tin phase, one of which (LO) becomes soft on approaching the transition to primitive hexagonal. For hcp-Si there is one Raman-active mode (TO), and an additional mode is observed in the stability field of Si-VI. The available theoretical results agree within (10-20)% with the experimental results.
引用
收藏
页码：2232 / 2234
页数：3
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