共 50 条
- [41] NATURE OF DEFECTS IN HEAVILY TE-DOPED GAAS REVUE DE PHYSIQUE APPLIQUEE, 1983, 18 (08): : 475 - 478
- [42] ELECTRONIC-STRUCTURE OF HEAVILY DOPED POLYACETYLENE PHYSICAL REVIEW B, 1992, 46 (24): : 15833 - 15843
- [44] STUDY OF SOME OPTICAL AND ELECTRICAL-PROPERTIES OF HEAVILY DOPED SILICON LAYERS JOURNAL DE PHYSIQUE, 1983, 44 (NC-5): : 65 - 71
- [46] BEHAVIOR OF CU IN GAAS HEAVILY DOPED BY TE .2. PHOTO-ELECTRIC PROPERTIES IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1979, (09): : 11 - 15
- [47] HEAVILY SN-DOPED GAAS BUFFER LAYERS FOR ALGAAS/GAAS HBTS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (04): : L707 - L709