共 50 条
- [31] Influence of temperature on the electronic properties of Si δ-doped GaAs structures EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2003, 21 (02): : 97 - 101
- [32] Electronic properties of two coupled Si δ-doped GaAs structures EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2003, 21 (02): : 91 - 95
- [33] ELECTRONIC AND TRANSPORT-PROPERTIES OF PARA-DOPED AND NORMAL-DOPED HTSC FIZIKA NIZKIKH TEMPERATUR, 1991, 17 (09): : 1102 - 1104
- [37] Carrier passivation in heavily doped GaAs:Be by hydrogen plasma Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1994, 33 (7 B): : 4421 - 4423
- [39] ABSORPTION NEAR BAND EDGES IN HEAVILY DOPED GAAS PHYSICAL REVIEW B, 1985, 32 (02) : 1090 - 1100
- [40] HOPPING CONDUCTIVITY IN HEAVILY DOPED STRONGLY COMPENSATED GAAS PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 91 (01): : 311 - 318