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- [4] Electronic properties of GaAs doped with copper ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 713 - 717
- [5] Electronic properties of intrinsic and heavily doped AlN and GaN JOURNAL DE PHYSIQUE IV, 2006, 132 : 105 - 110
- [6] PROPERTIES OF ELECTRONIC SPECTRUM IN HEAVILY DOPED GALLIUM ARSENIDE SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (10): : 2461 - &
- [7] Electronic structure near the band gap of heavily nitrogen doped GaAs and GaP PROGRESS IN SEMICONDUCTOR MATERIALS FOR OPTOELECTRONIC APPLICATIONS, 2002, 692 : 49 - 60