BIAS DEPENDENCE OF FT AND FMAX IN AN IN0.52AL0.48AS/N+-IN0.53GA0.47AS MISFET

被引：7
|
作者：
DELALAMO, JA [1 ]
MIZUTANI, T [1 ]
机构：
[1] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN
来源：
IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 12期
关键词：
D O I：
10.1109/55.20426
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：654 / 656
页数：3
相关论文
共 50 条
  • [31] Metamorphic In0.53Ga0.47As/In0.52Al0.48As tunnel diodes grown on GaAs
    Lewis, JH
    Pitts, B
    Deshpande, MR
    El-Zein, N
    2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 2000, : 143 - 148
  • [32] In0.53Ga0.47As/In0.52 Al0.48As HEMTs with fmax of 183 GHz
    Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
    Pan Tao Ti Hsueh Pao, 2007, 12 (1860-1863):
  • [33] INTERDIFFUSION PHENOMENA IN IN0.53GA0.47AS/IN0.52AL0.48AS HETEROSTRUCTURES AND QUANTUM WELLS
    BAIRD, RJ
    POTTER, TJ
    LAI, R
    BHATTACHARYA, PK
    KOTHIYAL, GP
    JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S15 - S15
  • [34] Mechanisms for implantation induced interdiffusion at In0.53Ga0.47As/In0.52Al0.48As heterointerfaces
    Univ of Electro-Communications, Tokyo, Japan
    Mater Sci Eng B Solid State Adv Technol, 1-3 (28-32):
  • [35] Electron Transport in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As Quantum Well with a δ-Si Doped Barrier in High Electric Fields
    Vasil'evskii, I. S.
    Galiev, G. B.
    Matveev, Yu. A.
    Klimov, E. A.
    Pozela, J.
    Pozela, K.
    Suziedelis, A.
    Paskevic, C.
    Juciene, V.
    SEMICONDUCTORS, 2010, 44 (07) : 898 - 903
  • [36] Energy relaxation studies in In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As two-dimensional electron gases and quantum wires
    Prasad, C
    Ferry, DK
    Wieder, H
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (04) : S60 - S63
  • [37] Electron transport in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well with a δ-Si doped barrier in high electric fields
    I. S. Vasil’evskii
    G. B. Galiev
    Yu. A. Matveev
    E. A. Klimov
    J. Požela
    K. Požela
    A. Sužiedėlis
    Č. Paškevič
    V. Jucienė
    Semiconductors, 2010, 44 : 898 - 903
  • [38] HIGH-QUALITY IN0.53GA0.47AS SCHOTTKY DIODE FORMED BY GRADED SUPERLATTICE OF IN0.53GA0.47AS/IN0.52AL0.48AS
    LEE, DH
    LI, SS
    SAUER, NJ
    CHANG, TY
    APPLIED PHYSICS LETTERS, 1989, 54 (19) : 1863 - 1865
  • [39] Effect of doping at the substrate/buffer layer interface on the Rashba coefficient a in In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As asymmetric quantum wells
    Koga, T
    Nitta, J
    Marcet, S
    TOWARDS THE CONTROLLABLE QUANTUM STATES: MESOSCOPIC SUPERCONDUCTIVITY AND SPINTRONICS, 2003, : 73 - 79
  • [40] INTERSUBBAND ABSORPTION IN IN0.53GA0.47AS/IN0.52AL0.48AS MULTIPLE QUANTUM-WELLS
    ASAI, H
    KAWAMURA, Y
    PHYSICAL REVIEW B, 1991, 43 (06): : 4748 - 4759
12345