BIAS DEPENDENCE OF FT AND FMAX IN AN IN0.52AL0.48AS/N+-IN0.53GA0.47AS MISFET

被引：7
|
作者：
DELALAMO, JA [1 ]
MIZUTANI, T [1 ]
机构：
[1] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN
来源：
IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 12期
关键词：
D O I：
10.1109/55.20426
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：654 / 656
页数：3
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