REGROWTH AND DEFECT REDUCTION IN UNCAPPED SE+ IMPLANTED (100) GAAS AFTER PULSED ELECTRON-BEAM ANNEALING

被引：3
|
作者：
BARBIER, D [1 ]
LAUGIER, A [1 ]
DERUDET, B [1 ]
PIVOT, J [1 ]
机构：
[1] UNIV LYON 1,DPM,F-69622 VILLEURBANNE,FRANCE
来源：
JOURNAL OF CRYSTAL GROWTH | 1987年 / 82卷 / 04期
关键词：
D O I：
10.1016/S0022-0248(87)80018-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：725 / 732
页数：8
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